features absolute maximum ratings ta = 25 parameter symbol rating unit drain- source voltage v ds 20 gate-to-source voltage v gs 20 continuous drain current, v gs @ 10v ta = 25 i d 10 continuous drain current,v gs @ 10v t c =70 i d 8.3 pulsed drain current *1 i dm 82 maximum power dissipation ta = 25 2 maximum power dissipation ta = 70 1.3 linear derating factor 0.016 operating junction and storage temperature range t j ,t stg -55 to + 150 junction-to-drain lead r jl 20 /w maximum junction-to-ambient *2,3 r ja 62.5 /w single pulse avalanche energy *4 e as 19 mj avalanche current *1 i ar 8.2 a *1 repetitive rating; pulse width limited by max. junction temperature. * 2 when mounted on 1 inch square copper board. *3 r is measured at t j of approxmately 90 *4starting t j =25 , l = 0.57mh, r g =25 ,i as =8.2a. a p d v w 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type ic KRF8910 smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification
smd type ic smd type ic KRF8910 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to-source breakdown voltage bv dss v gs =0v,i d = 250a 20 v breakdown voltage temp. coefficient v(br)dss / t j i d = 1ma,reference to 25 0.015 v/ v gs = 10v, i d = 10a*1 10.7 13.4 v gs =4.5v,i d = 8.0a*1 14.6 18.3 gate threshold voltage v gs(th) 1.65 2.55 v gate threshold voltage coefficient v gs(th) / t j -4.8 mv/ v ds = 16v, v gs =0v 1.0 v ds = 16v, v gs =0v,t j = 125 150 gate-to-source forward leakage v gs = 20v 100 gate-to-source reverse leakage v gs = -20v -100 forward transconductance g fs v ds = 10v, i d =8.2a 24 s total gate charge q g 7.4 11 pre-vth gate-to-source charge q gs1 2.4 post-vth gate-to-source charge q gs2 0.80 gate-to-drain charge q gd 2.5 gate charge overdrive q godr 1.7 switch charge (q gs2 +q gd )q sw 3.3 output charge q oss v ds = 10v, v gs =0v 4.4 turn-on delay time t d(on) 6.2 rise time t r 10 turn-off delay time t d(off) 9.7 fall time t f 4.1 input capacitance c iss v gs = 0v 960 output capacitance c oss v ds = 10v 300 reverse transfer capacitance c rss f = 1.0mhz 160 continuous source current body diode) i s 2.5 pulsed source current body diode) *2 i sm 82 diode forward voltage v sd t j =25 ,i s =8.2a,v gs =0v*1 1.0 v reverse recovery time t rr t j =25 ,i f =8.2a,v dd =10v 17 26 ns reverse recoverycharge q rr d i /d t = 100a/ s*1 6.5 9.7 c *1 pulse width 400 s; duty cycle 2%. *2 repetitive rating; pulse width limited bymax v ds =v gs ,i d = 250 a i dss ns r ds(on) static drain-to-source on-resistance drain-to-source leakage current a i d =8.2a,v gs =4.5v,v ds = 10v v dd = 10v, v gs =4.5v,i d =8.2a nc pf a i gss na 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic product specification
|
